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DMN26D0UT
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
20
?
?
V
V GS = 0V, I D = 100 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = 25°C
I DSS
I GSS
?
?
?
?
500
± 1
± 500
± 100
nA
μ A
nA
nA
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±8V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V GS(th)
0.5
?
1.0
V
V DS = V GS , I D = 250 μ A
?
1.8
3.0
V GS = 4.5V, I D = 100mA
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
R DS (ON)
|Y fs |
V SD
?
?
?
?
?
0.5
2.4
2.9
3.7
5.4
242
?
4.0
6.0
10.0
15.0
?
1.0
Ω
mS
V
V GS = 2.5V, I D = 50mA
V GS = 1.8V, I D = 20mA
V GS = 1.5V, I D = 10mA
V GS = 1.2V, I D = 1mA
V DS =10V, I D = 0.1A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
14.1
2.9
1.6
?
?
?
pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS, V GS = 4.5V (Note 5)
Turn-On Delay Time
t d(on)
?
3.8
?
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
?
?
?
7.9
13.4
15.2
?
?
?
ns
V GS = 4.5V, V DD = 10V
I D = 200mA, R G = 2.0 ?
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
0.8
0.4
0.7
0.6
V GS = 8V
V GS = 4.5V
0.3
V DS = 10V
T A = -55°C
0.5
V GS = 3.0V
T A = 25°C
T A = 85°C
T A = 125°C
0.4
V GS = 2.5V
0.2
T A = 150°C
0.3
0.2
0.1
V GS = 2.0V
V GS = 1.5V
0.1
0
0
0.5 1 1.5 2 2.5
3
0
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
2 of 6
www.diodes.com
September 2009
? Diodes Incorporated
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